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Effect of Fluorination Position on the Crystalline Structure and Stretchability of Intrinsically Stretchable Polymer
Hyerin Shin1, Yejin Kim1, Mingi Sung2
1Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea.
Abstract:
A clear understanding of the structure-property relationship of intrinsically stretchable polymer semiconductors (ISPSs) is essential for developing high-performance polymer-based electronics. Herein, we investigate the effect of the fluorination position on the crystalline structure, charge-carrier mobility, and stretchability of polymer semiconductors based on a benzodithiophene-co-benzotriazole configuration. Although four different polymer semiconductors showed similar field-effect mobilities for holes (μ ≈ 0.1 cm2 V-1 s-1), polymer semiconductors with nonfluorinated backbones exhibited improved thin-film stretchability confirmed with crack onset strain (εc ≈ 20%-50%) over those of fluorinated counterparts (εc ≤ 10%). The enhanced stretchability of polymer semiconductors with a nonfluorinated backbone is presumably due to the higher face-on crystallite ratio and π-π stacking distance in the out-of-plane direction than those of the other polymer semiconductors. These results provide new insights into how the thin-film stretchability of polymer semiconductors can be improved by using precise molecular tailoring without deteriorating electrical properties.
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