High-Performance and Low-Power p-Channel Transistors Based on Monolayer Be₂C

The advantages of 2D materials in alleviating the issues of short-channel effect and power dissipation in field-effect transistors (FETs) are well recognized. However, the progress of complementary integrated circuits has been stymied by the absence of high-performance (HP) and low-power (LP) p-channel transistors. Therefore, we conducted an investigation into the electronic and ballistic transport characteristics of monolayer Be₂C, which features quasi-planar hexacoordinate carbons, by employing nonequilibrium Green's function combined with density functional theory. Be₂C monolayer has planar anticonventional bonds and a direct bandgap of 1.53 eV. The I_on of p-type Be₂C HP FETs can achieve a remarkable 2767 μA μm^-1. All of the device properties of 2D Be₂C FETs can exceed the demands of the International Roadmap for Devices and Systems. The excellent properties of Be₂C as a 2D p-orbital material with a high hole mobility are discussed from different aspects. Our findings thus illustrate the tremendous potential of 2D Be₂C for the next generation of HP and LP electronics applications.