Understanding radiation-generated electronic traps in radiation dosimeters based on organic field-effect transistors

Area of Science:

• Materials Science
• Organic Electronics
• Radiation Detection

Background:

• Organic dosimeters offer advantages over traditional radiation detection methods.
• Understanding radiation-organic material interactions is crucial for advancing organic dosimeter technology.

Purpose of the Study:

• To identify and characterize electronic traps in organic field-effect transistor (OFET) based radiation dosimeters.
• To elucidate the origin of these trap states and their impact on dosimeter performance.

Main Methods:

• Utilized spectral analysis to determine the trap density of states.
• Conducted optical and structural studies to investigate the physical origins of trap states.

Main Results:

• Successfully identified and quantitatively characterized electronic traps within the OFET dosimeters.
• Determined that local structural disorder in crystalline films is the primary source of these trap states.
• Established a direct link between structural defects and radiation-induced trap generation.

Conclusions:

• Local structural disorder in organic crystalline films is responsible for electronic traps in OFET radiation dosimeters.
• These findings provide critical insights into radiation-induced defects in organic materials.
• Paves the way for designing more efficient and reliable organic radiation detection devices.