Quantitative characterization of built-in potential profile across GaAs p-n junctions using Kelvin probe force
Nobuyuki Ishida1, Takaaki Mano1
1National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Nanotechnology
|November 9, 2023
Summary
Kelvin probe force microscopy (KPFM) accurately measures surface potential in materials. This study confirms KPFM
Area of Science:
- Materials Science
- Surface Science
- Nanotechnology
Background:
- Electrostatic potential distribution is crucial for charge carrier behavior in materials and devices.
- Kelvin probe force microscopy (KPFM) offers high spatial resolution for surface potential measurements.
- Surface potential measurements can deviate from bulk potential due to various factors.
Purpose of the Study:
- To investigate the quantitative accuracy of KPFM for potential distribution measurements.
- To minimize factors causing deviations between surface and bulk potential measurements.
- To validate KPFM measurements against simulated bulk potential.
Main Methods:
- Performed KPFM measurements across a p-n junction.
- Carefully selected sample, force sensor, and measurement mode to minimize error.
- Compared KPFM-measured surface potential with simulated bulk potential.
Main Results:
- Eliminated factors causing deviation between surface and bulk potential.
- Achieved good agreement between KPFM-measured surface potential and simulated bulk potential.
- Demonstrated KPFM's capability for quantitative potential characterization at the 10 nm scale.
Conclusions:
- KPFM can accurately quantify electrostatic potential distributions.
- The technique is reliable for characterizing potential changes on the nanoscale.
- Optimized KPFM measurements provide bulk potential insights.
