Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Unravelling the nanoscale mechanism of polarization reversal in a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric capacitor by vector piezoresponse force microscopy.

Nanoscale·2024
Same author

Giant Electromechanical Effect in Piezoelectric Nanomembranes Based on Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>.

ACS applied materials & interfaces·2023
Same author

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Film.

Nanomaterials (Basel, Switzerland)·2023
Same author

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS<sub>2</sub> Films.

Nanomaterials (Basel, Switzerland)·2023
Same author

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO<sub>2</sub> Insets.

ACS omega·2022
Same author

Polarization Switching Kinetics in Thin Ferroelectric HZO Films.

Nanomaterials (Basel, Switzerland)·2022
Same journal

Correction: Jiang et al. Methods for Obtaining One Single Larmor Frequency, Either <i>v</i><sub>1</sub> or <i>v</i><sub>2</sub>, in the Coherent Spin Dynamics of Colloidal Quantum Dots. <i>Nanomaterials</i> 2023, <i>13</i>, 2006.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Correction: Ekman et al. Synthesis, Characterization, and Adsorption Properties of Nitrogen-Doped Nanoporous Biochar: Efficient Removal of Reactive Orange 16 Dye and Colorful Effluents. <i>Nanomaterials</i> 2023, <i>13</i>, 2045.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>-Based Materials and Coatings for De-Icing and Defogging of Wind Turbine Blades: Materials Basis, Structural Design, Engineering Integration, and Future Opportunities.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Influence of the Ripeness Stages of the Precursors on the Optical Characteristics of Carbon Dots Obtained from Valencia Orange Peels (<i>Citrus sinensis</i> L. Osbeck) by Hydrothermal Synthesis.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Metal-<i>N</i>-Heterocyclic Carbene Porous Organic Polymers as Efficient Bifunctional Water-Splitting Electrocatalysts.

Nanomaterials (Basel, Switzerland)·2026
See all related articles

Related Experiment Video

Updated: Jul 11, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K

Wake-Up Free Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films.

Anastasia Chouprik1, Vitalii Mikheev1, Evgeny Korostylev1

  • 1Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Russia.

Nanomaterials (Basel, Switzerland)
|November 10, 2023
PubMed
Summary
This summary is machine-generated.

Researchers developed a method to stabilize ferroelectricity in ultrathin hafnium zirconium oxide (HfZrOx) films by engineering internal built-in fields. This approach prevents the detrimental wake-up effect, enabling stable ferroelectric properties crucial for advanced memory devices.

Keywords:
ferroelectric hafnium oxideferroelectric memoryferroelectric tunnel junctionpiezoresponse force microscopysynchrotron X-ray micro-diffractionultrathin filmswake-up

More Related Videos

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.5K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.1K

Related Experiment Videos

Last Updated: Jul 11, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.5K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.1K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Development of next-generation non-volatile memory relies on ultrathin ferroelectric films.
  • Polycrystalline-doped Hafnium Oxide (HfO2) films are promising due to silicon compatibility and ferroelectric properties.
  • Remanent polarization in HfO2 films degrades at nanoscale thickness, exacerbated by the wake-up effect.

Purpose of the Study:

  • To elucidate an approach for suppressing the wake-up effect in ultrathin Hf0.5Zr0.5O2 films.
  • To induce stable ferroelectricity in 4.5 nm thick Hf0.5Zr0.5O2 films without a wake-up effect.
  • To reveal the role of engineered internal built-in fields in stabilizing ferroelectricity.

Main Methods:

  • Engineering internal built-in fields within the as-prepared Hf0.5Zr0.5O2 film structure.
  • Fabrication of ferroelectric structures with varying internal built-in field patterns.
  • In situ analysis using piezoresponse force microscopy and synchrotron X-ray micro-diffraction.

Main Results:

  • Stable ferroelectricity was induced in 4.5 nm thick Hf0.5Zr0.5O2 films by engineering internal built-in fields.
  • The wake-up effect was successfully suppressed, preventing degradation before completion.
  • The crucial role of built-in fields in achieving stable ferroelectricity in ultrathin Hf0.5Zr0.5O2 films was confirmed.

Conclusions:

  • Engineered internal built-in fields are key to achieving stable ferroelectricity in ultrathin Hf0.5Zr0.5O2 films.
  • This method overcomes the limitations imposed by the wake-up effect in nanoscale ferroelectric materials.
  • The findings pave the way for reliable ultrathin ferroelectric films in advanced memory applications.