Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

261
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
261
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

779
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
779
Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Diamagnetism01:26

Diamagnetism

2.4K
Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....
2.4K
Types Of Superconductors01:28

Types Of Superconductors

1000
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
1000
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

354
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
354

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking.

Nature nanotechnology·2026
Same author

Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics.

Nano letters·2025
Same author

Publisher Correction: Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides.

Nature communications·2025
Same author

Electrically activating two-dimensional antiferromagnets.

Nature nanotechnology·2025
Same author

Unconventional (anti)ferroelectricity in van der Waals group-IV monochalcogenides.

Nature communications·2025
Same author

Phase transition in WSe<sub>2-</sub>Te<sub></sub> monolayers driven by charge injection and pressure: a first-principles study.

Nanoscale·2024
Same journal

Topological properties of curved spacetime extended Su-Schrieffer-Heeger model.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

Influence of lattice expansion on Cr ferromagnetism in Ce<sub>(1-x)</sub>La<sub>(x)</sub>CrGe<sub>3</sub>compounds revealed by atomic-scale measurements.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

Bond-length-driven magnetic transition in quasi-one-dimensional CrSb<i>X</i><sub>3</sub>(<i>X</i>=S, Se).

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

Anelasticity in MgAl2O4 spinel due to cation order-disorder.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

The influence of water on the dynamics of alternating polymers P(C<sub>8</sub>EG<sub>4</sub>) and P(C<sub>4</sub>EG<sub>4</sub>) by broadband dielectric spectroscopy.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same journal

How surface curvature shapes water nanodroplets in air.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
See all related articles

Related Experiment Video

Updated: Jul 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

Recent progress in 2D bipolar magnetic semiconductors.

Ju Chen1, Xuening Wang1, Yipeng An2

  • 1Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|November 13, 2023
PubMed
Summary
This summary is machine-generated.

Bipolar magnetic semiconductors (BMS) offer tunable half-metallicity for spintronics. Research reviews 2D BMS materials and methods to create them, guiding future device development.

Keywords:
100% spin polarization2Dbipolar magnetic semiconductors

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

Related Experiment Videos

Last Updated: Jul 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.7K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Bipolar magnetic semiconductors (BMS) possess unique spin-polarized energy bands.
  • Their half-metallicity is tunable via gate voltage, enabling spin-state switching.
  • BMS are promising for advanced spintronic devices like spin transistors and filters.

Purpose of the Study:

  • To review the recent advancements in two-dimensional (2D) bipolar magnetic semiconductors.
  • To highlight methods for achieving and engineering BMS properties in 2D materials.
  • To provide insights for the design and synthesis of novel BMS for spintronics.

Main Methods:

  • High-throughput computational screening to identify intrinsic 2D BMS materials.
  • Material modification strategies including doping, strain engineering, and external fields.
  • Advanced material design, such as interlayer stacking and Janus structures.

Main Results:

  • Identification of numerous potential intrinsic 2D BMS materials.
  • Demonstration of methods to induce BMS properties in non-BMS materials.
  • Understanding of how various modifications affect BMS characteristics.

Conclusions:

  • Significant progress has been made in the field of 2D BMS.
  • These findings are crucial for the rational design and synthesis of new BMS materials.
  • The reviewed advancements pave the way for next-generation spintronic devices.