Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Reconfigurable nanoelectronic devices require semiconductors with tunable electrical properties.
• Achieving stable and reversible n/p-type switching in two-dimensional (2D) materials remains a significant challenge.

Purpose of the Study:

• To demonstrate a method for fully reversible channel-type conversion in Indium Selenide (InSe) transistors.
• To explore the underlying mechanisms of this reversible switching.
• To fabricate functional logic circuits and devices based on this technology.

Main Methods:

• Utilized ultraviolet-ozone oxidation and thermal annealing for reversible channel-type conversion in InSe transistors.
• Employed electrical, spectroscopic, and microscopic analyses to investigate the conversion mechanism.
• Performed density functional theory (DFT) calculations to understand the electronic effects of oxygen intercalation.
• Fabricated InSe-based inverters, NAND, and NOR logic gates.

Main Results:

• Demonstrated stable, bidirectional polarity switching in InSe transistors.
• Identified oxygen intercalation and elimination within layered InSe as the cause of reversible type conversion.
• DFT confirmed oxygen intercalation induces p-type conduction by introducing electron states above the valence band maximum.
• Fabricated functional complementary logic gates and an inverter.
• Achieved a high forward-to-reverse current ratio (>10^6) in an InSe-based p-n homojunction.
• Demonstrated self-powered photodetection with high specific detectivity (>10^12 Jones).

Conclusions:

• Successfully demonstrated reversible channel-type engineering in layered InSe via controlled oxygen intercalation.
• This method offers a viable pathway for developing reconfigurable nanoelectronic devices.
• The fabricated InSe-based devices show promise for advanced electronic and optoelectronic applications.