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Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics.

Zhili Cheng1, Zian Hong1, Zixin Li1

  • 1Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.

Nano Letters
|August 25, 2025
PubMed
Summary
This summary is machine-generated.

Researchers achieved reversible n/p-type switching in Indium Selenide (InSe) transistors. This breakthrough enables stable, reconfigurable nanoelectronic devices through controlled oxygen intercalation and removal.

Keywords:
2D-layered semiconductorInSe-based transistorslogic circuitsreversible n/p-type conversionsself-powered photodetection

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Reconfigurable nanoelectronic devices require semiconductors with tunable electrical properties.
  • Achieving stable and reversible n/p-type switching in two-dimensional (2D) materials remains a significant challenge.

Purpose of the Study:

  • To demonstrate a method for fully reversible channel-type conversion in Indium Selenide (InSe) transistors.
  • To explore the underlying mechanisms of this reversible switching.
  • To fabricate functional logic circuits and devices based on this technology.

Main Methods:

  • Utilized ultraviolet-ozone oxidation and thermal annealing for reversible channel-type conversion in InSe transistors.
  • Employed electrical, spectroscopic, and microscopic analyses to investigate the conversion mechanism.
  • Performed density functional theory (DFT) calculations to understand the electronic effects of oxygen intercalation.
  • Fabricated InSe-based inverters, NAND, and NOR logic gates.

Main Results:

  • Demonstrated stable, bidirectional polarity switching in InSe transistors.
  • Identified oxygen intercalation and elimination within layered InSe as the cause of reversible type conversion.
  • DFT confirmed oxygen intercalation induces p-type conduction by introducing electron states above the valence band maximum.
  • Fabricated functional complementary logic gates and an inverter.
  • Achieved a high forward-to-reverse current ratio (>10^6) in an InSe-based p-n homojunction.
  • Demonstrated self-powered photodetection with high specific detectivity (>10^12 Jones).

Conclusions:

  • Successfully demonstrated reversible channel-type engineering in layered InSe via controlled oxygen intercalation.
  • This method offers a viable pathway for developing reconfigurable nanoelectronic devices.
  • The fabricated InSe-based devices show promise for advanced electronic and optoelectronic applications.