Effect of copper doping on plasmonic nanofilms for high performance photovoltaic energy applications

In the current era, alternative but environment-friendly sources of energy have gained attention to meet the growing energy demands. In particular, the focus of research has been solar energy and using it to fulfill energy demands. Solar energy is either directly converted into electrical energy or stored for later use. Solar cells are a practical way to turn solar energy into electrical energy. Various materials are being investigated to manufacture solar cell devices that can absorb a maximum number of photons present in sunlight. The present study reports thermally evaporated in situ Cu-doped SnS photon absorber thin films with tunable physical properties. This study mainly explored the effects of changing Cu concentrations on the physical features of light absorption of SnS thin films. The thin films were formed by simultaneous resistive heating of Cu and SnS powders on glass substrates at 150 °C. The X-ray diffraction patterns revealed pure SnS thin films having orthorhombic polycrystalline crystal structures oriented preferentially along the (111) plane. Raman spectroscopy confirmed this phase purity. Photoconductivity studies showed phase dependence on Cu content that improved with increasing concentrations of Cu. The optical bandgap energy was also found to be dependent on Cu content and was observed at 1.10-1.47 eV for SnS thin films with variation in the Cu content, i.e., 0-18%. According to the hot probe method, all films displayed p-type conductivity for the substitution of Cu metal atoms. These findings demonstrated that the prepared thin films are substantial candidates as low-cost, suitably efficient, thin-film solar cells featuring environmentally-friendly active layers that absorb sunlight.