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Updated: Jul 11, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Role of electron and hole doping in the NdNi1-VO3 nanostructure
Raktima Basu1, Reshma Kumawat1, Mrinmay Sahu1
1National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Mohanpur 741246, Nadia, West Bengal, India. Raktimabasu14@gmail.com.
Abstract:
Neodymium nickelate, NdNiO3, attracts attention due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO3 are extremely complex as structural distortion, electron correlation, charge ordering, and orbital overlapping play significant roles in the transitions. We report the effects of electron and hole injection via doping a single 3d metal, V, in the NdNiO3 nanostructure to understand the variations in the electronic properties without any structural distortion. A reversible resistivity modulation of more than five orders of magnitude via hole doping and complete suppression of the metal to insulator transition via electron doping is observed along with the switching of major charge carriers. The modulation of electronic properties without any structural distortion and external strain opens up new directions to consider the NdNi1-VO3 nanostructures applicable as emerging electronic devices.
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