Related Experiment Video
Updated: Jul 11, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Phase biasing of a Josephson junction using Rashba-Edelstein effect.
Tapas Senapati1, Ashwin Kumar Karnad2, Kartik Senapati3
1School of Physical Sciences, National Institute of Science Education and Research (NISER) Bhubaneswar, An OCC of Homi Bhabha National Institute, Jatni, 752050, Odisha, India.
Researchers detected the Rashba-Edelstein effect at interfaces using Josephson junctions. This method directly measures spin moments, offering new insights into spin-orbit interactions and potential applications in quantum circuits.
Area of Science:
- Condensed Matter Physics
- Spintronics
- Quantum Information Science
Background:
- The Rashba-Edelstein effect generates spin density at interfaces due to charge current.
- Direct detection of this interfacial spin moment is challenging.
- Spin-orbit interactions are crucial for next-generation electronics and quantum computing.
Purpose of the Study:
- To demonstrate a novel method for directly detecting the Rashba-Edelstein spin moment.
- To utilize Josephson junctions for probing interfacial spin polarization.
- To explore potential applications in superconducting quantum circuits.
Main Methods:
- Fabrication of planar Josephson junctions using superconducting electrodes (Nb) on a Rashba interface (Pt/Cu).
- Measurement of asymmetric Fraunhofer patterns in nano-junctions.
- Analysis of the phase shift induced by the Rashba-Edelstein spin moment.
Main Results:
- Observed asymmetric Fraunhofer patterns in Nb-(Pt/Cu)-Nb nano-junctions.
- Attributed asymmetry to the locking of the Rashba-Edelstein spin moment to the flux quantum.
- Provided clear signatures for the direct detection of interfacial spin polarization.
Conclusions:
- A planar Josephson junction provides a direct detection method for the Rashba-Edelstein effect.
- This technique offers a new perspective on detecting spin polarization from various spin-orbit effects.
- The platform enables magnetic-field-controlled phase biasing for superconducting quantum circuits.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Diode: Forward bias
The behavior of a diode in forward bias...
P-N junction
Diode: Reverse bias