Related Experiment Video
Updated: Jul 12, 2026
11:08
Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
19.0K
Simultaneous improvement of polarization and bandgap by finite solid solution engineering
Fei Guo1, Rui Liu2, Siyuan Guo1
1School of Science, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China. applegf123@sina.com.
Physical Chemistry Chemical Physics : PCCP
|November 22, 2023
Summary
Finite solid solution engineering simultaneously improved polarization and bandgap in materials. This approach enhances photovoltaic performance by optimizing both properties for better energy conversion.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Photovoltaics
Background:
- Narrow bandgaps typically decrease photovoltaic performance.
- Optimizing both polarization and bandgap is crucial for advanced energy materials.
Purpose of the Study:
- To design a finite solid solution for simultaneous improvement of polarization and bandgap.
- To investigate the critical effect of BiMnO3 (BM) incorporation into Na0.5Bi0.5TiO3 (NBT).
Main Methods:
- Finite solid solution engineering.
- Incorporation of BiMnO3 into the Na0.5Bi0.5TiO3 crystal lattice.
- Analysis of lattice expansion, orbital hybridization, and Jahn-Teller distortion.
Main Results:
- Achieved a narrow bandgap of 2.90 eV and polarization of 65.9 μC cm⁻².
- BM doping (0.04) resulted in open-circuit voltage of 1.1 V and short-circuit current of 0.0132 mA cm⁻².
- Observed strong lattice expansion and reduced optical bandgap due to J-T distortion.
Conclusions:
- Finite solid solution engineering offers an optimized strategy for enhancing polarization and bandgap.
- Demonstrated a method for mutual benefit of polarization and bandgap in materials for photovoltaic applications.
Related Concept Videos
02:35Band Theory
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
01:01Energy Bands in Solids
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
01:22Semiconductors
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...