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Suppressed charge recombination via defect engineering of confined semiconducting quantum dots for

Ce Hu1,2, Daojian Ye1,3, Jie Ren1,3

  • 1Jiangxi Key Laboratory of Nanomaterials and Sensors, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang 330022, Jiangxi, China. xfluo@jxnu.edu.cn.

Chemical Communications (Cambridge, England)
|November 24, 2023
PubMed

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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