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An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters
Lin Cheng1, Hongliang Lu1, Silu Yan1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.
Abstract:
In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored. A dual-extreme learning machine (D-ELM) structure with an adaptive genetic algorithm (AGA) optimization process is used to simulate the fresh S-parameters of InP HBT devices and the degradation of S-parameters after accelerated aging, respectively. In addition to the reliability parametric inputs of the original aging problem, the S-parameter degradation trend obtained from the aging small-signal equivalent circuit is used as additional information to inject into the D-ELM structure. Good agreement was achieved between measured and predicted results of the degradation of S-parameters within a frequency range of 0.1 to 40 GHz.
