Search research articles

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Design and Optimization of Dolmen-like Nanoantenna on Silicon Dioxide for Sensing Applications.

Sensors (Basel, Switzerland)·2026

Same author

Deep Learning for Optical Sensor Applications: A Review.

Sensors (Basel, Switzerland)·2023

Same author

Integrated Lab-on-a-Chip Optical Biosensor Using Ultrathin Silicon Waveguide SOI MMI Device.

Sensors (Basel, Switzerland)·2020

See all related articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Search research articles

Related Experiment Video

Updated: Jul 10, 2025

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Published on: March 22, 2019

Mid-Infrared Gas Sensing Based on Electromagnetically Induced Transparency in Coupled Plasmonic Resonators.

Sarah Shafaay¹, Sherif Mohamed¹, Mohamed Swillam¹

¹Department of Physics, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835, Egypt.

Sensors (Basel, Switzerland)

|November 25, 2023

Summary

This study introduces a novel CMOS-compatible silicon plasmonic sensor for mid-infrared applications. The sensor demonstrates high sensitivity and selectivity for gas detection, paving the way for advanced sensing technologies.

Keywords:

coupled-ring resonators doped silicon mid-infrared spectral range optical sensors plasmonic mode

More Related Videos

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Published on: July 21, 2018

$Synthesis and Operation of Fluorescent-core Microcavities for Refractometric Sensing$

Synthesis and Operation of Fluorescent-core Microcavities for Refractometric Sensing

Published on: March 13, 2013

Related Experiment Videos

Last Updated: Jul 10, 2025

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

Published on: March 22, 2019

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons

Published on: July 21, 2018

$Synthesis and Operation of Fluorescent-core Microcavities for Refractometric Sensing$

Synthesis and Operation of Fluorescent-core Microcavities for Refractometric Sensing

Published on: March 13, 2013

Area of Science:

Photonics and Plasmonics
Materials Science
Sensor Technology

Background:

Surface plasmon polaritons (SPPs) in doped silicon enable new applications in sensing, imaging, and photonics.
CMOS-compatible fabrication is crucial for integrating plasmonic devices into existing technologies.

Purpose of the Study:

To propose and investigate a CMOS-compatible doped silicon plasmonic sensor.
To demonstrate tunable plasmon resonance in the mid-infrared region.
To evaluate the sensor's performance for gas detection (methane and ethane).

Main Methods:

Fabrication of a doped silicon sensor using phosphorus at 5 × 10^20 cm^-3 concentration.
Utilizing coupled metal-insulator-metal (MIM) ring resonators.
Characterizing plasmonic mode profiles, bend loss, and resonance shifts.
Measuring sensor sensitivity and selectivity towards methane and ethane.

Main Results:

Achieved surface plasmon resonance in the mid-infrared region.
Demonstrated tunable resonance by controlling carrier density.
Obtained a sensitivity of 7539.9 nm/RIU at 7.7 μm wavelength.
Achieved a Figure of Merit (FOM) of 6732 for gas sensing.

Conclusions:

The proposed silicon plasmonic sensor offers high sensitivity and selectivity for mid-infrared gas sensing.
Coupled ring resonators enhance sensing performance, leading to a smaller FWHM and increased sensitivity.
The sensor's CMOS compatibility and performance make it suitable for advanced modulation and sensing applications.