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Mid-Infrared Gas Sensing Based on Electromagnetically Induced Transparency in Coupled Plasmonic Resonators
Sarah Shafaay1, Sherif Mohamed1, Mohamed Swillam1
1Department of Physics, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835, Egypt.
This study introduces a novel CMOS-compatible silicon plasmonic sensor for mid-infrared applications. The sensor demonstrates high sensitivity and selectivity for gas detection, paving the way for advanced sensing technologies.
Area of Science:
- Photonics and Plasmonics
- Materials Science
- Sensor Technology
Background:
- Surface plasmon polaritons (SPPs) in doped silicon enable new applications in sensing, imaging, and photonics.
- CMOS-compatible fabrication is crucial for integrating plasmonic devices into existing technologies.
Purpose of the Study:
- To propose and investigate a CMOS-compatible doped silicon plasmonic sensor.
- To demonstrate tunable plasmon resonance in the mid-infrared region.
- To evaluate the sensor's performance for gas detection (methane and ethane).
Main Methods:
- Fabrication of a doped silicon sensor using phosphorus at 5 × 10^20 cm^-3 concentration.
- Utilizing coupled metal-insulator-metal (MIM) ring resonators.
- Characterizing plasmonic mode profiles, bend loss, and resonance shifts.
- Measuring sensor sensitivity and selectivity towards methane and ethane.
Main Results:
- Achieved surface plasmon resonance in the mid-infrared region.
- Demonstrated tunable resonance by controlling carrier density.
- Obtained a sensitivity of 7539.9 nm/RIU at 7.7 μm wavelength.
- Achieved a Figure of Merit (FOM) of 6732 for gas sensing.
Conclusions:
- The proposed silicon plasmonic sensor offers high sensitivity and selectivity for mid-infrared gas sensing.
- Coupled ring resonators enhance sensing performance, leading to a smaller FWHM and increased sensitivity.
- The sensor's CMOS compatibility and performance make it suitable for advanced modulation and sensing applications.
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