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Updated: Jul 9, 2025

05:15
Flash Infrared Annealing for Perovskite Solar Cell Processing
Published on: February 3, 2021
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Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem
Arnaud Walter1, Brett A Kamino1, Soo-Jin Moon1
1CSEM SA, Sustainable Energy Jaquet-Droz 1 2002 Neuchâtel Switzerland andrea.ingenito@csem.ch.
Abstract:
Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed.

