High-Density Artificial Synapse Array Consisting of Homogeneous Electrolyte-Gated Transistors.

Area of Science:

• Materials Science
• Neuroscience
• Electrical Engineering

Background:

• Artificial synapse arrays using electrolyte-gated transistors (EGTs) show promise for neuromorphic computing.
• Integrating EGTs is challenging due to conflicts between polymer electrolytes and photolithography.

Purpose of the Study:

• To develop a scheme for high-density integration of EGTs using a lateral-gate structure.
• To enhance artificial synapse array performance through a novel electrolyte framework.

Main Methods:

• Implemented a lateral-gate structure for EGT integration.
• Fabricated a 100 × 100 EGT array on a 2.5 × 2.5 cm² glass substrate.
• Developed a porous zeolitic imidazolate frameworks-67 based electrolyte framework.

Main Results:

• Achieved a unit density of up to 1600 devices cm⁻².
• The electrolyte framework exhibited ionic conductivity up to 2.87 × 10⁻³ S cm⁻¹.
• The artificial synapse array demonstrated high performance and homogeneity in image processing tasks.

Conclusions:

• The lateral-gate structure facilitates high-density EGT integration, overcoming previous limitations.
• The developed electrolyte framework significantly enhances array performance.
• The integrated array shows feasibility for practical applications like handwriting recognition with 92.80% accuracy.