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Simultaneous Sensing of Velocity and Position of a Moving Light Source Using Metal-Insulator-Semiconductor Structures
Zixuan Liao1, Jidong Li2, Yuyang Long1
1College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China.
Abstract:
Photodetectors based on semiconductor devices have been widely used to sense light position, intensity, and wavelength. However, monitoring the motion velocity of a light beam generally requires complex integration of device arrays. Here, we report a single device of a simple metal-insulator-semiconductor structure for self-powered sensing not only position but also velocity of a light beam or shadow. A velocity-dependent voltage output between two terminals of the metal is observed. It is attributed to light illumination-induced local surface potential change in semiconductors and the following movement of local charges accumulated in the metal due to capacitive coupling. The amplitude of the velocity-dependent voltage can be facilely modulated by applying a gate voltage. These results shed light on compact devices with multiple sensing functions.

