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Updated: Jul 9, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Quantum systems in silicon carbide for sensing applications.

S Castelletto¹, C T-K Lew², Wu-Xi Lin^3,4,5

¹School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia.

Reports on Progress in Physics. Physical Society (Great Britain)

|November 29, 2023

Summary

Silicon carbide (SiC) color centers are promising for quantum sensing. These systems enable nanoscale magnetic, electric field, and temperature measurements with high sensitivity.

Keywords:

colour centres paramagnetic spin defects quantum sensing silicon carbide

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Area of Science:

Quantum Information Science
Materials Science
Condensed Matter Physics

Background:

Silicon carbide (SiC) possesses unique color centers with potential for quantum sensing applications.
These color centers exhibit properties suitable for detecting magnetic fields, electric fields, and temperature at the nanoscale.

Purpose of the Study:

To review recent studies on SiC qubit systems for quantum sensing.
To explore the properties of SiC color centers and their control methods.
To discuss applications in magnetometry, thermometry, and electrometry.

Main Methods:

Review of paramagnetic color centers in SiC and their spin Hamiltonians.
Analysis of initialization, control, and read-out techniques for SiC qubits.
Compilation of state-of-the-art sensitivities and proposed enhancement strategies.

Main Results:

SiC color centers offer versatile platforms for quantum sensing.
Various methods for spin and charge state control have been identified.
Current sensitivities in SiC-based quantum sensing have been summarized.

Conclusions:

SiC is a leading semiconductor material for advanced quantum sensing technologies.
Scalability in integrated photonics and operation in harsh environments are key advantages.
SiC qubit systems are poised for significant future advancements in sensing.