Interfacial Se-O Bonds Modulating Spatial Charge Distribution in FeSe₂/Nb:Fe₂O₃ with Rapid Hole Extraction for...

Surface engineering is an effective strategy to improve the photoelectrochemical (PEC) catalytic activity of hematite, and the defect states with abundant coordinative unsaturation atoms can serve as anchoring sites for constructing intimate connections between semiconductors. On this basis, we anchored an ultrathin FeSe₂ layer on Nb⁵⁺-doped Fe₂O₃ (FeSe₂/Nb:Fe₂O₃) via interfacial Se-O chemical bonds to tune the surface potential. Density functional theory (DFT) calculations indicate that amorphous FeSe₂ decoration could generate electron delocalization over the composite photoanodes so that the electron mobility was improved to a large extent. Furthermore, electrons could be transferred via the newly formed Se-O bonds at the interface and holes were collected at the surface of electrode for PEC water oxidation. The desired charge redistribution is in favor of suppressing charge recombination and extracting effective holes. Later, work function calculations and Mott-Schottky (M-S) plots demonstrate that a type-II heterojunction was formed in FeSe₂/Nb:Fe₂O₃, which further expedited carrier separation. Except for spatial carrier modulation, the amorphous FeSe₂ layer also provided abundant active sites for intermediates adsorption according to the d band center results. In consequence, the target photoanodes attained an improved photocurrent density of 2.42 mA cm^-2 at 1.23 V versus the reversible hydrogen electrode (RHE), 2.5 times as that of the bare Fe₂O₃. This study proposed a defect-anchoring method to grow a close-connected layer via interfacial chemical bonds and revealed the spatial charge distribution effects of FeSe₂ on Nb:Fe₂O₃, giving insights into rational designation in composite photoanodes.