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Updated: Jul 9, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
An enhanced visualization image acquisition method for samples with poor conductivity under a conventional scanning
Shuiquan Pang1, Hao Xia1, Xianmin Zhang2
1China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, Guangdong 511370, People's Republic of China.
Abstract:
The low-vacuum and low-accelerating-voltage modes are the most simple and practical ways to directly analyze poorly conductive samples in conventional scanning electron microscopy (SEM). However, structural feature information may disappear or be obscured in these imaging modes, making it challenging to identify and analyze some local microstructures of poorly conductive samples. To overcome this challenge, an enhanced visualization image acquisition method for samples with poor conductivity is proposed based on the image registration and multi-sensor fusion technology. Experiments demonstrate that the proposed method can effectively obtain enhanced visualization images containing clearer terrain information than the SEM source images, thereby providing new references for measuring and analyzing microstructures.
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