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Updated: Jun 14, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Huan Zhao1, Linghan Zhu2, Xiangzhi Li1
1Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States.
Strain engineering in 2D materials creates defect-bound interlayer excitons (IXs) for bright, tunable quantum light emission. This advances 2D quantum emitters for near-infrared applications.
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Published on: May 31, 2018
00:07A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
Published on: September 5, 2019
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