A temperature sensor based on Si/PS/SiO₂ photonic crystals

The present research deals with the extremely sensitive temperature-sensing capabilities of defective one-dimensional photonic crystal structures (Si/PS/SiO₂). The proposed structure is realized by putting a defective layer of material silicon Dioxide (SiO₂) in the middle of a structure consisting of alternating layers of silicon (Si) and porous silica (PS). The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. The transmission spectra of the proposed structure in the visible light domain are computed throughout a temperature range of 25-900 °C, and we study the thermal properties related to the defective mode. Additionally, the impacts of changing the defect layer's thickness are examined. Due to the effects of thermal expansion and the thermo-optical coefficient, the defect mode varies significantly as the temperature increases. Our investigation shows that the proposed structure considerably impacts the transmission intensity of the defective mode. The theoretically obtained numeric values of the quality factor and sensitivity are 2216.6 and 0.085 nm/°C, respectively. The challenges presented by conventional temperature sensors could be overcome by the suggested defective photonic crystal sensor. These results are enough to support our claim that the present design can be used as an ultra-sensitive temperature sensor.