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Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink
Niharika Gupta1,2, Shu Wang2,3, Naoki Higashitarumizu1,2
1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
Science Advances
|December 8, 2023
Summary
Researchers developed a black phosphorus (bP) ink for scalable mid-wave infrared (MWIR) devices. This ink enables bright MWIR light emission and detection, overcoming previous manufacturing challenges.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Mid-wave infrared (MWIR) technology is crucial for chemical sensing, imaging, and spectroscopy.
- Black phosphorus (bP) offers superior optoelectronic properties for MWIR devices due to a low Auger recombination coefficient.
- Scalability of bP-based MWIR devices has been a significant challenge.
Purpose of the Study:
- To develop a scalable method for fabricating high-performance MWIR optoelectronic devices using black phosphorus.
- To demonstrate the potential of black phosphorus ink for creating uniform, large-area films with excellent optoelectronic properties.
- To showcase the application of bP ink in MWIR light emission and detection devices.
Main Methods:
- Formulation of a novel black phosphorus (bP) ink.
- Deposition of centimeter-scale, uniform, and pinhole-free bP films.
- Characterization of MWIR optoelectronic properties, including photoluminescence quantum yield.
- Integration of bP films into heterostructure devices for light emission and detection.
- Proof-of-concept demonstration using bP ink as a phosphor on a commercial light-emitting diode.
Main Results:
- The bP ink successfully preserves the exceptional MWIR optoelectronic properties of bP.
- Centimeter-scale, uniform, and pinhole-free bP films were deposited.
- The films exhibited a high photoluminescence quantum yield, outperforming competing semiconductors.
- Bright MWIR light emission was demonstrated by using bP ink as a phosphor.
- Successful integration into heterostructure devices for direct-injected MWIR light emission and detection.
Conclusions:
- A scalable bP ink formulation enables the fabrication of high-performance MWIR optoelectronic devices.
- The developed bP films offer a promising alternative to existing III-V and II-VI semiconductors.
- This advancement paves the way for practical applications of bP in MWIR sensing, imaging, and spectroscopy.
