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Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink.

Niharika Gupta^1,2, Shu Wang^2,3, Naoki Higashitarumizu^1,2

¹Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.

Science Advances

|December 8, 2023

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Researchers developed a black phosphorus (bP) ink for scalable mid-wave infrared (MWIR) devices. This ink enables bright MWIR light emission and detection, overcoming previous manufacturing challenges.

Area of Science:

Materials Science
Optoelectronics
Nanotechnology

Background:

Mid-wave infrared (MWIR) technology is crucial for chemical sensing, imaging, and spectroscopy.
Black phosphorus (bP) offers superior optoelectronic properties for MWIR devices due to a low Auger recombination coefficient.
Scalability of bP-based MWIR devices has been a significant challenge.

Purpose of the Study:

To develop a scalable method for fabricating high-performance MWIR optoelectronic devices using black phosphorus.
To demonstrate the potential of black phosphorus ink for creating uniform, large-area films with excellent optoelectronic properties.
To showcase the application of bP ink in MWIR light emission and detection devices.

Main Methods:

Formulation of a novel black phosphorus (bP) ink.

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Deposition of centimeter-scale, uniform, and pinhole-free bP films.

Characterization of MWIR optoelectronic properties, including photoluminescence quantum yield.

Integration of bP films into heterostructure devices for light emission and detection.

Proof-of-concept demonstration using bP ink as a phosphor on a commercial light-emitting diode.

Main Results:

The bP ink successfully preserves the exceptional MWIR optoelectronic properties of bP.
Centimeter-scale, uniform, and pinhole-free bP films were deposited.
The films exhibited a high photoluminescence quantum yield, outperforming competing semiconductors.
Bright MWIR light emission was demonstrated by using bP ink as a phosphor.
Successful integration into heterostructure devices for direct-injected MWIR light emission and detection.

Conclusions:

A scalable bP ink formulation enables the fabrication of high-performance MWIR optoelectronic devices.
The developed bP films offer a promising alternative to existing III-V and II-VI semiconductors.
This advancement paves the way for practical applications of bP in MWIR sensing, imaging, and spectroscopy.