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Related Experiment Video

Updated: Jul 8, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates.

Jacob J Ewing, Cheyenne Lynsky, Matthew S Wong

    Optics Express
    |December 13, 2023
    PubMed
    Summary
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    Highly efficient long-wavelength InGaN LEDs utilize V-defects for improved hole injection. This breakthrough in nitride LEDs achieves 6.5% external quantum efficiency, advancing solid-state lighting and display technologies.

    Area of Science:

    • Semiconductor Physics
    • Materials Science
    • Optoelectronics

    Background:

    • Long-wavelength Indium Gallium Nitride (InGaN) Light-Emitting Diodes (LEDs) are crucial for displays and solid-state lighting.
    • Carrier injection barriers hinder the efficiency of traditional long-wavelength nitride LEDs.

    Purpose of the Study:

    • To investigate V-defect engineered InGaN LEDs for enhanced efficiency.
    • To explore the role of lateral carrier injection in improving LED performance.

    Main Methods:

    • Fabrication of V-defect engineered LEDs on patterned sapphire substrates (PSS) and Gallium Nitride (GaN) on Silicon (Si).
    • Formation of V-defects using a 40-period InGaN/GaN superlattice.
    • Measurement of packaged external quantum efficiency (EQE) for 600 nm LEDs.

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    Main Results:

    • Achieved a packaged external quantum efficiency (EQE) of 6.5% for 0.1 mm² LEDs operating at 600 nm.
    • Demonstrated the effectiveness of V-defect engineering in enhancing LED performance.
    • Attributed the high EQE to efficient lateral carrier injection facilitated by V-defects.

    Conclusions:

    • V-defect engineering is a viable strategy to overcome carrier injection limitations in long-wavelength InGaN LEDs.
    • Lateral injection through V-defects significantly boosts the efficiency of nitride-based LEDs.
    • These findings pave the way for more efficient long-wavelength LEDs for advanced lighting and display applications.