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Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient

Roshani Singh1, Gyanendra Kumar Maurya1, Vidushi Gautam1

  • 1Spintronics and Magnetic Materials Laboratory, Department of Applied Sciences, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India.

Scientific Reports
|December 14, 2023
PubMed

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