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Distributed feedback broad area lasers with multiple epitaxially stacked active regions and tunnel junctions
Optics Letters
|December 15, 2023
Summary
This study explores distributed feedback (DFB) broad area (BA) lasers emitting near 900 nm. A 200 µm stripe width DFB BA laser achieved 100 W pulse power, demonstrating high brightness.
Area of Science:
- Semiconductor lasers
- Optoelectronics
- Photonics
Background:
- Distributed feedback (DFB) broad area (BA) lasers are crucial for high-power applications.
- Optimizing their electro-optical performance and beam quality is essential for advanced laser systems.
Purpose of the Study:
- Investigate DFB BA lasers with multiple epitaxially stacked active regions and tunnel junctions.
- Compare the performance and beam quality of DFB BA lasers with varying stripe widths.
Main Methods:
- Fabrication of DFB BA lasers with multiple active regions and tunnel junctions.
- Characterization of electro-optical performance (power, current) and beam quality.
- Spectral analysis to determine emission wavelength and bandwidth.
Main Results:
- A 1 mm cavity length DFB BA laser with a 200 µm stripe width achieved 100 W optical pulse power (10 ns pulses at 63 A).
- This resulted in a high brightness of 81 MW/cm²sr.
- The lasers emitted around 886 nm with a narrow spectral bandwidth of 0.2 nm (64 pm/K).
Conclusions:
- DFB BA lasers with optimized stripe width offer high power and brightness.
- The demonstrated performance highlights their potential for demanding optoelectronic applications.
- Further research can focus on scaling power and improving beam quality.
