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Updated: Jul 7, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI
Guangcheng Wu1, Li Xiang1, Wenqiang Wang1
1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
Engineers developed a novel indium selenide transistor for advanced artificial optic-neural and electro-neural synapses. This breakthrough enables efficient processing-in-sensor and computing-in-memory for AI vision systems.
Area of Science:
- Materials Science
- Semiconductor Physics
- Artificial Intelligence Hardware
Background:
- Traditional hardware faces efficiency and power limitations due to separated sensor, memory, and computation units.
- The increasing volume of data and the Internet of Things exacerbate these hardware challenges.
- Novel materials and architectures are needed for integrated processing and memory functionalities.
Purpose of the Study:
- To design and demonstrate an α-phase indium selenide (α-In2Se3) transistor for artificial synapses.
- To enable processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities using a 2D ferroelectric semiconductor channel.
- To evaluate the performance of the α-In2Se3 transistor in both optic-neural and electro-neural synapse applications.
Main Methods:
- Fabrication of a transistor utilizing α-In2Se3 as the 2D ferroelectric semiconductor channel material.
- Characterization of the transistor's performance as an optic-neural synapse, measuring photoresponsivity and detectivity.
- Evaluation of the transistor's performance as an electro-neural synapse, assessing program/erase speed and energy consumption.
- Integration of α-In2Se3 transistors into an AI vision system to demonstrate PIS and CIM functionalities.
Main Results:
- The α-In2Se3 transistor demonstrated high photoresponsivity (2855 A/W) and detectivity (2.91 × 10^14 Jones) as an optic-neural synapse.
- As an electro-neural synapse, it achieved fast program/erase speeds (40 ns/50 µs) and ultralow energy consumption (0.37 aJ/spike).
- An AI vision system utilizing these transistors achieved 92.63% recognition accuracy within 12 epochs, showcasing synergistic PIS and CIM effects.
Conclusions:
- The α-In2Se3 transistor shows significant potential for next-generation vision hardware.
- The developed device enhances processing efficiency and power efficiency in AI applications.
- This work paves the way for advanced integrated sensing and computing systems.
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