Solution-Processed Robust Multifunctional Memristor of 2D Layered Material Thin Film

Memristors have gained significant attention recently due to their unique ability to exhibit functionalities for brain-inspired neuromorphic computing. Here, we demonstrate a high-performance multifunctional memristor using a thin film of liquid-phase exfoliated (LPE) 2D MoS₂ pinched between two electrodes. Nanoscale inspection of a solution-processed MoS₂ thin film using scanning electron and scanning probe microscopies revealed the high-quality and defect-free nature. Systematic current-voltage (I-V) characterizations depict a facile, nonvolatile resistive switching behavior of our 2D MoS₂ thin film device with a current On/Off ratio of 10³ and energy cost of only a few picojoules. Excellent performance metrics, including at least 10³ cycle endurance, 10⁴ s retention, and switching speed down to a few nanoseconds, reflect robust high-performance data storage capability. Charge carriers trapping and detrapping at the sulfur vacancy defect sites in MoS₂ nanosheets mainly display the resistive switching property, supported by the impedance analysis and theoretical fitting results. Multifunctionality is leveraged through implementing two-input logic gate operations, edge computation, and crucial adaptive learning via a Pavlov's dogs experiment. Overall, our solution-processed MoS₂ memristor has the potential for tremendous future opportunities in integrated circuits and different computing paradigms, including energy-efficient neuromorphic computing hardware in artificial intelligence.