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Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash

Ukju An1, Gilsang Yoon1, Donghyun Go1

  • 1Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.

Micromachines
|December 23, 2023
PubMed

Keywords:
3-D NAND flash memorycharge losscross-temperaturedecompositiongrain boundarypoly-Si channelthreshold voltage variation

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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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