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A Method for Fast Au-Sn Bonding at Low Temperature Using Thermal Gradient.

Wenchao Wang1,2, Ziyu Liu1,2, Delong Qiu2

  • 1State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.

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|December 23, 2023
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Summary
This summary is machine-generated.

Gold-tin (Au-Sn) microbumps utilize thermal gradient bonding (TGB) for Micro Electro Mechanical Systems (MEMS) and 3D packaging. This method achieves high bonding strength at lower temperatures, optimizing Au-Sn intermetallic compound formation for enhanced reliability.

Keywords:
Au-Snflip chipintermetallic compound (IMC)solid-state diffusion (SSD)thermal gradient bonding (TGB)

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Flip chip bonding with gold-tin (Au-Sn) microbumps is crucial for Micro Electro Mechanical Systems (MEMS) and 3D packaging.
  • Au-Sn microbumps offer low resistance, high reliability, and fine pitch, but require high bonding temperatures and complex intermetallic compound (IMC) formation.
  • Optimizing Au-Sn bonding is essential for advanced electronic packaging.

Purpose of the Study:

  • To investigate Au-Sn solid-state diffusion (SSD) bonding using the thermal gradient bonding (TGB) method.
  • To lower bonding temperatures and shorten bonding times while achieving high bonding strength.
  • To optimize Au-Sn microbump preparation and bonding parameters for superior bonding quality.

Main Methods:

  • Preparation of low-roughness Au-Sn microbumps using an optimized process.
  • Optimization of bonding parameters: temperature, time, and pressure in a formic acid (HCOOH) environment.
  • Characterization of intermetallic compound (IMC) formation and verification using finite element simulation.

Main Results:

  • Achieved a shear strength of 23.898 MPa under optimized TGB conditions (150 °C/250 °C gradient, 10 min, >10 MPa pressure).
  • Identified IMCs as Au-Sn and Au5Sn, with Au5Sn formation increasing with annealing time after tin depletion.
  • Finite element simulation confirmed enhanced bonding strength at the specified gradient temperatures and validated the solid-state diffusion mechanism.

Conclusions:

  • The TGB method effectively lowers Au-Sn bonding temperatures for MEMS and 3D packaging.
  • Optimized parameters and the TGB method yield high bonding strength and reliable IMC formation.
  • This approach advances Au-Sn microbump bonding for high-performance electronic applications.