Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy.

Arthur F Lipinski1, Christopher W Lambert1, Achyut Maity1

  • 1School of Mathematics and Physics, Queen's University Belfast, Belfast BT7 1NN, U.K.

ACS Applied Electronic Materials
|January 1, 2024
PubMed
Summary

Titanium nitride (TiN) thin films offer a promising alternative for plasmonics. A CrRu buffer layer enables high-quality TiN on cost-effective substrates, achieving excellent plasmonic performance.

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