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Anomalous Hall effect in Nd-doped Bi1.1Sb0.9STe2 topological insulator single crystals
Lei Chen1, Weiyao Zhao2, Kaijian Xing3
1School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China. zrk@ustc.edu.
Abstract:
Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantum anomalous Hall effect, which has been observed in magnetic-topological-insulator-based devices. In this work, we report successful doping of rare-earth element Nd into Bi1.1Sb0.9STe2 bulk-insulating topological insulator single crystals, in which the Nd moments are ferromagnetically ordered at ∼100 K. Benefiting from the in-bulk-gap Fermi level, electronic transport behaviors dominated by the topological surface states are observed in the ferromagnetic region. At low temperatures, strong Shubnikov-de Haas oscillations with a nontrivial Berry phase are observed. The topological insulator with long range magnetic ordering in Nd-doped Bi1.1Sb0.9STe2 single crystals provides a good platform for quantum transport studies and spintronic applications.
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