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Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions.

Shu-Hui Zhang1, Ding-Fu Shao2, Zi-An Wang2,3

  • 1College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China.

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Researchers predict a new tunneling valley Hall effect (TVHE) in 2D materials. This effect, driven by tilted Dirac fermions, could enable strong valley polarization for advanced valleytronics applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Valleytronics leverages electron valley degrees of freedom for data processing.
  • Achieving strong valley polarization is essential for practical valleytronic devices.
  • Existing methods for valley polarization have limitations.

Purpose of the Study:

  • To predict a novel tunneling valley Hall effect (TVHE) in two-dimensional (2D) valley materials.
  • To demonstrate a method for generating strong valley polarization via momentum filtering.
  • To explore the potential for giant valley Hall angles in engineered tunnel junctions.

Main Methods:

  • Theoretical prediction of TVHE in all-in-one tunnel junctions.
  • Utilizing tilted Dirac fermions in 2D valley materials.
  • Simulating momentum filtering through controlled doping of electrode and spacer regions.

Main Results:

  • Demonstrated a strong TVHE driven by Dirac-cone tilting.
  • Achieved a giant valley Hall angle even without Berry curvature.
  • Predicted resonant tunneling for enhanced valley Hall effects with device engineering.

Conclusions:

  • The predicted TVHE offers a new pathway for generating valley polarization.
  • This research provides a foundation for realistic valleytronic device development.
  • Engineered tunnel junctions can significantly boost valley Hall effects.