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Inversion for Thermal Properties with Frequency Domain Thermoreflectance.

Benjamin Treweek1, Volkan Akcelik1, Wyatt Hodges1

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ACS Applied Materials & Interfaces
|January 9, 2024
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Summary

Advanced simulation and analysis techniques assess microelectronic device bond quality. Frequency domain thermoreflectance (FDTR) and finite element method (FEM) simulations map thermal conductivity to reveal potential failures in 3D integrated systems.

Keywords:
GaN-diamond devicesfinite element methodfrequency-domain thermoreflectancegradient-based optimizationheterogeneously integrated microelectronicsthermal boundary conductance

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Area of Science:

  • Microelectronic Engineering
  • Materials Science
  • Thermal Analysis

Background:

  • 3D integration enhances microelectronic devices but introduces thermomechanical stress due to thermal expansion mismatch.
  • Metal bump bonds in 3D integrated systems are prone to thermomechanical and electrical failures.
  • Advanced characterization is crucial for assessing bond quality in complex 3D microelectronic assemblies.

Purpose of the Study:

  • To develop and apply advanced characterization techniques for evaluating bond quality in 3D integrated microelectronic devices.
  • To model complex geometries and determine unknown thermal properties using finite element method (FEM) simulations.
  • To map the spatial distribution of thermal conductivity, indicating bond quality, using experimental data.

Main Methods:

  • Utilized finite element method (FEM) simulations with high-performance computing for complex geometric modeling.
  • Implemented a gradient-based optimization technique to determine unknown thermal properties.
  • Applied Frequency Domain Thermoreflectance (FDTR) to measure thermal properties non-destructively.
  • Analyzed experimental FDTR data from a Gallium Nitride (GaN)-diamond sample.

Main Results:

  • Successfully modeled complex sample geometries using FEM simulations.
  • Developed a method to determine thermal properties in discretized domains via optimization.
  • Obtained a spatial map of thermal conductivity in an unknown layer of the GaN-diamond sample.
  • Demonstrated the capability of FDTR coupled with FEM to assess bond quality.

Conclusions:

  • The developed FEM-based FDTR approach enables accurate thermal property determination in complex microelectronic structures.
  • This technique provides a spatial map of bond quality, crucial for identifying potential failure sites in 3D integrated devices.
  • Advanced simulation and non-contact thermal characterization are essential for reliable 3D microelectronic integration.