An integrated wearable sticker based on extended-gate AlGaN/GaN high electron mobility transistors for real-time

Boxuan Xu1,2, Hui Chang2,3, Guo Yang4

  • 1The College of Materials Science and Engineering, Shanghai University, Shanghai, 200072, People's Republic of China. lijun_yt@shu.edu.cn.

The Analyst
|January 10, 2024
PubMed