Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

337
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
337
Switching of BJT01:22

Switching of BJT

421
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
421
Schottky Barrier Diode01:27

Schottky Barrier Diode

362
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
362
Types of Semiconductors01:20

Types of Semiconductors

608
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
608
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

259
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259
MOSFET01:16

MOSFET

472
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
472

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Oxide induced degradation in MoS<sub>2</sub> field-effect transistors.

NPJ 2D materials and applications·2026
Same author

Resolving In Situ Exposure Dynamics in a Chemically Amplified EUV Photoresist Using Table-Top EUV Photoemission Spectroscopy.

ACS applied materials & interfaces·2025
Same author

Impact of Interface and Surface Oxide Defects on WS<sub>2</sub> Electronic Properties from First Principles.

ACS nano·2025
Same author

Unveiling surface reactivity: the crucial role of auxiliary ligands in gallium amidinate-based precursors for atomic layer deposition.

Dalton transactions (Cambridge, England : 2003)·2025
Same author

The C1s core levels of polycyclic aromatic hydrocarbons and styrenic polymers: A first-principles study.

The Journal of chemical physics·2024
Same author

Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: The Leading Role of the Electrostatic Landscape.

The journal of physical chemistry letters·2024
Same journal

Engineering In Situ Loose Selective Interface with Conducting Channels for Practical Ah-Level Aqueous Zinc Metal Batteries.

Nano-micro letters·2026
Same journal

On-Site Periodontitis Diagnosis via Room-Temperature Oral Exhalation H<sub>2</sub>S Sensor Based on Yb-Doped Bi<sub>2</sub>S<sub>3</sub> Nanoribbon.

Nano-micro letters·2026
Same journal

Flexible Dual-Modal Sensing Transistor Enabled by Deep Learning Decoupling for Independent Light and Temperature Reconstruction.

Nano-micro letters·2026
Same journal

CuS-Bridged MXene-Based Photoresponsive Phase Change Materials Enabling Thermoelectric Cogeneration and Microwave Absorption.

Nano-micro letters·2026
Same journal

NIR and Oxidative Stress-Modulated Intestinal Peristalsis Motion of Tubular Conductive Thermo-Hydrogel Actuator.

Nano-micro letters·2026
Same journal

Droplet-Merging and Dissolution-Induced Intermediate State Strategy Enabled Efficiency > 17.5% for the Printed Organic Solar Cells.

Nano-micro letters·2026
See all related articles

Related Experiment Video

Updated: Jul 5, 2025

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
10:42

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV

Published on: December 29, 2016

10.7K

Chalcogenide Ovonic Threshold Switching Selector.

Zihao Zhao1,2, Sergiu Clima3, Daniele Garbin3

  • 1National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China.

Nano-Micro Letters
|January 11, 2024
PubMed
Summary
This summary is machine-generated.

Ovonic threshold switch (OTS) devices show promise for high-density memory. Research explores OTS materials, switching mechanisms, and applications in emerging technologies like neuromorphic computing.

Keywords:
ChalcogenideNon-volatile memoryOvonic threshold switch (OTS)Selector

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation
10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.5K

Related Experiment Videos

Last Updated: Jul 5, 2025

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
10:42

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV

Published on: December 29, 2016

10.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation
10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.5K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • The data explosion necessitates advanced memory technologies beyond Flash and DRAM.
  • Intel Optane, a 3D phase-change memory, utilizes ovonic threshold switch (OTS) selectors.
  • Chalcogenide-based OTS devices are gaining attention for their unique properties.

Purpose of the Study:

  • To review the discovery and electrical characteristics of OTS devices.
  • To explore recent advancements in OTS materials (Se-based, Te-based, S-based).
  • To discuss various OTS switching mechanism models and research progress.

Main Methods:

  • Literature review of OTS phenomenon discovery and evolution.
  • Analysis of key electrical parameters and material systems.
  • Examination of theoretical models for OTS switching mechanisms.

Main Results:

  • OTS devices are crucial components in cross-point architectures for 3D memory.
  • Diverse material systems and switching models contribute to OTS performance.
  • Significant progress has been made in understanding and innovating OTS mechanisms.

Conclusions:

  • OTS devices are successfully applied in 3D high-density memory.
  • Emerging applications like self-selecting memory and neuromorphic computing show great potential.
  • Continued research into OTS materials and mechanisms will drive future memory innovations.