Optical Memory in a Microfabricated Rubidium Vapor Cell

Scalability presents a central platform challenge for the components of current quantum network implementations that can be addressed by microfabrication techniques. We demonstrate a high-bandwidth optical memory using a warm alkali atom ensemble in a microfabricated vapor cell compatible with wafer-scale fabrication. By applying an external tesla-order magnetic field, we explore a novel ground-state quantum memory scheme in the hyperfine Paschen-Back regime, where individual optical transitions can be addressed in a Doppler-broadened medium. Working on the ^{87}Rb D_{2} line, where deterministic quantum dot single-photon sources are available, we demonstrate bandwidth-matching with hundreds of megahertz broad light pulses keeping such sources in mind. For a storage time of 80 ns we measure an end-to-end efficiency of η_{e2e}^{80  ns}=3.12(17)%, corresponding to an internal efficiency of η_{int}^{0  ns}=24(3)%, while achieving a signal-to-noise ratio of SNR=7.9(8) with coherent pulses at the single-photon level.