Related Experiment Video
Updated: Jul 5, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Voltage-Controlled ON-OFF-Switching of Magnetoresistance in FeOx/Fe/Au Aerogel Networks
Martin Nichterwitz1,2, Karl Hiekel3, Daniel Wolf2
1Electrochemical Sensors and Energy Storage, Faculty of Natural Sciences, Institute of Chemistry, TU Chemnitz, Strasse der Nationen 62, Chemnitz 09111, Germany.
Abstract:
Voltage control of magnetoresistance (MR) in nanoscale three-dimensional (3D) geometries is interesting from a fundamental point of view and a promising route toward novel sensors and energy-efficient computing schemes. Magneto-ionic mechanisms are favorable for low-voltage control of magnetism and room-temperature operation, but magneto-ionic control of MR has been studied only for planar geometries so far. We synthesize a 3D nanomaterial with magneto-ionic functionality by electrodepositing an iron hydroxide/iron coating on a porous nanoscale gold network (aerogel). To enable maximum magneto-ionic ON-OFF-switching, the thickness of the coating is adjusted to a few nanometers by a self-terminating electrodeposition process. In situ magnetotransport measurements during electrolytic gating of these nanostructures reveal large reversible changes in MR, including ON-OFF-switching of MR, with a small applied voltage difference (1.72 V). This effect is related to the electrochemical switching between a ferromagnetic iron shell/gold core nanostructure (negative MR at the reduction voltage) and an iron oxide shell/gold core nanostructure (negligible MR at the oxidation voltage).
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Ferromagnetism

