Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

Area of Science:

• Materials Science
• Nanotechnology
• Solid-State Electronics

Background:

• Metal-insulator-metal (MIM) atomristors based on 2D monolayers show nonvolatile resistive switching.
• Further exploration of 2D resistance switching devices is needed, considering material combinations and future applications.

Purpose of the Study:

• Investigate the coexistence of volatile and nonvolatile switching in monolayer hexagonal boron nitride (h-BN) atomristors.
• Understand the factors influencing the transition between volatile and nonvolatile switching behaviors.

Main Methods:

• Fabrication and characterization of h-BN monolayer atomristors with silver (Ag) electrodes.
• Analysis of switching behavior under varying current compliance and atomristor areas.
• Computational modeling to understand conductive bridge formation.

Main Results:

• Demonstrated coexistence of volatile and nonvolatile switching in h-BN/Ag atomristors.
• Transition attributed to the thickness and stiffness of conductive bridges between h-BN and Ag.
• Current compliance controls Ag atom dissociation; device area influences electric field localization and bridge stability.

Conclusions:

• Weak conductive bridges lead to volatile switching, while strong bridges result in nonvolatile switching.
• h-BN atomristors with Ag electrodes offer potential for integrating volatile neurons and nonvolatile synapses in neuromorphic arrays.
• Electrical and dimensional design choices are key for creating dual-function neuromorphic devices.