Related Experiment Video
Updated: Jul 30, 2026

Characterization of Electrode Materials for Lithium Ion and Sodium Ion Batteries Using Synchrotron Radiation Techniques
Published on: November 11, 2013
Boosting Manganese Selenide Anode for Superior Sodium-Ion Storage via Triggering α → β Phase Transition
Shaokun Chong1, Ting Li1, Shuangyan Qiao1
1Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
Abstract:
Sodium-ion batteries (SIBs) have been extensively studied owing to the abundance and low-price of Na resources. However, the infeasibility of graphite and silicon electrodes in sodium-ion storage makes it urgent to develop high-performance anode materials. Herein, α-MnSe nanorods derived from δ-MnO2 (δ-α-MnSe) are constructed as anodes for SIBs. It is verified that α-MnSe will be transferred into β-MnSe after the initial Na-ion insertion/extraction, and δ-α-MnSe undergoes typical conversion mechanism using a Mn-ion for charge compensation in the subsequent charge-discharge process. First-principles calculations support that Na-ion migration in defect-free α-MnSe can drive the lattice distortion to phase transition (alpha → beta) in thermodynamics and dynamics. The formed β-MnSe with robust lattice structure and small Na-ion diffusion barrier boosts great structure stability and electrochemical kinetics. Hence, the δ-α-MnSe electrode contributes excellent rate capability and superior cyclic stability with long lifespan over 1000 cycles and low decay rate of 0.0267% per cycle. Na-ion full batteries with a high energy density of 281.2 Wh·kg-1 and outstanding cyclability demonstrate the applicability of δ-α-MnSe anode.
More Related Videos
Related Concept Videos
Atomic Nuclei: Nuclear Relaxation Processes
π Electron Effects on Chemical Shift: Overview
Nuclear Overhauser Enhancement (NOE)
Double Resonance Techniques: Overview
Spin decoupling is usually achieved by...
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

