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Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation.
Hyejin Kim1, Geonhui Han1, Seojin Cho1
1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|January 22, 2024
Summary
This study introduces a novel multilayer synaptic device for neuromorphic computing. The metal-insulator-metal (MIM) device significantly reduces operating power while enabling high-density integration.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Science
Background:
- Neuromorphic computing systems require low operating power and high-density integration for efficiency.
- Existing synaptic devices face challenges in balancing power consumption and integration density.
Purpose of the Study:
- To propose and develop a multilayer synaptic device with a metal-insulator-metal (MIM) structure.
- To reduce the operating power of neuromorphic computing systems.
- To maintain high-density integration capabilities.
Main Methods:
- Fabrication of a multilayer synaptic device using an 8-inch wafer-based complementary metal-oxide-semiconductor (CMOS) process.
- Comparison of three types of MIM-structured synaptic devices.
- Analysis of operational conductance levels and power reduction effects.
Main Results:
- The developed multilayer synaptic device exhibited low-power operation.
- Inserted layers within the MIM structure acted as internal resistors, contributing to power reduction.
- Modulated operational conductance levels were achieved.
Conclusions:
- The simple MIM structure and achieved low-power operation confirm the feasibility of multilayer synaptic devices.
- These devices are suitable for high-density integration in neuromorphic computing systems.
- The proposed device offers a promising solution for energy-efficient neuromorphic hardware.
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