Tuning the superconducting performance of YBa2Cu3O7-δ films through field-induced oxygen doping
Jordi Alcalà1, Alejandro Fernández-Rodríguez2, Thomas Günkel2
1Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193, Bellaterra, Barcelona, Spain. jalcala@icmab.es.
Scientific Reports
|January 22, 2024
Summary
Field-induced oxygen diffusion in YBCO devices creates defects, altering superconducting critical current density. This research clarifies mechanisms of resistive switching in cuprate superconductors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Superconductivity
Background:
- Metal-insulator transitions and resistive switching are key phenomena in materials science.
- Resistive switching in oxides is often linked to oxygen vacancies, but mechanisms remain unclear.
- Cuprate superconductors like YBa2Cu3O7-δ (YBCO) exhibit complex behaviors under electrical stress.
Purpose of the Study:
- To investigate field-induced oxygen diffusion in YBCO devices.
- To analyze the impact of resistive switching on superconducting properties, specifically critical current density.
- To identify the role of induced defects in device performance.
Main Methods:
- Utilized gate voltage pulses to switch YBCO devices to different resistive states.
- Measured magnetic field and angular dependence of critical current density.
- Employed transition electron microscopy to analyze structural changes.
Main Results:
- Field-induced resistive switching to high resistance states involves the generation of YBa2Cu4O7 (Y124) intergrowths.
- These intergrowths are associated with a significant number of oxygen vacancies.
- Observed changes in critical current density align with the structural modifications.
Conclusions:
- Field-induced oxygen doping significantly impacts cuprate superconductor performance.
- The generation of Y124 intergrowths is a key mechanism in field-induced resistive switching.
- Understanding these mechanisms is crucial for developing advanced superconducting devices.
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