Jove
Visualize
Contact Us

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

362
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
362
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

537
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
537
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

337
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
337
Diode: Forward bias01:20

Diode: Forward bias

1.0K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.0K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

358
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
358
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

279
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
279

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Remimazolam besylate reduces hypoxemia during painless gastrointestinal endoscopy in elderly patients: study protocol for a multicenter, randomized, controlled trial.

Trials·2026
Same author

Age‑stratified median effective dose (ED₅₀) of remimazolam besylate for successful gastroscope insertion without body movement in geriatric patients.

BMC anesthesiology·2026
Same author

Therapeutic Potential of Selected Probiotic Strains in a Murine Model of Ovalbumin-Induced Atopic Dermatitis and Asthma.

International journal of molecular sciences·2025
Same author

Effect of esketamine vs sufentanil adjunct to propofol deep sedation on the incidence of oxygen-desaturation in elderly patients undergoing urologic surgeries: a randomized, double-blind, controlled trial.

BMC anesthesiology·2025
Same author

Exploring the influence of probiotic administration routes on immune responses in atopic march.

Frontiers in immunology·2025
Same author

Design and Implementation of an Online Efficiency-Optimized Multi-Functional Compensator for Wind Turbine Generators.

Micromachines·2023
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jul 5, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

27.7K

Design and Implementation of a Power Semiconductor-Based Switching Mode Laser Diode Driver.

Chao-Tsung Ma1, Fang-Yu Zhang1

  • 1Applied Power Electronics Systems Research Group, Department of EE, CEECS, National United University, Miaoli City 36063, Taiwan.

Micromachines
|January 23, 2024
PubMed
Summary

This study introduces an efficient, programmable switching mode laser diode driver for high-power fiber lasers, improving upon bulky linear power supplies. The new design offers superior dynamic current control for laser diode modules.

Keywords:
full-bridge phase-shift converterhigh-power fiber laserlaser diode driverpower semiconductor device (PSD)

More Related Videos

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
08:21

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

12.4K
Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography
11:34

Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

Published on: May 15, 2017

11.1K

Related Experiment Videos

Last Updated: Jul 5, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

27.7K
Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
08:21

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

12.4K
Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography
11:34

Subsurface Defect Localization by Structured Heating Using Laser Projected Photothermal Thermography

Published on: May 15, 2017

11.1K

Area of Science:

  • Electrical Engineering
  • Optoelectronics
  • Power Electronics

Background:

  • Fiber lasers are crucial for industrial applications like cutting and welding.
  • Current laser diode drivers (linear DC power supplies) suffer from low efficiency and large size.
  • The performance of fiber lasers is directly linked to the pumping source driver's capabilities.

Purpose of the Study:

  • To propose a novel, efficient, and compact laser diode driver for high-power fiber lasers.
  • To enhance the dynamic control and performance of laser diode modules.
  • To address the limitations of existing commercial pumping source drivers.

Main Methods:

  • Design of a programmable switching mode laser diode driver using a power semiconductor device (PSD)-based full-bridge phase-shifted (FB-PS) DC-DC converter.
  • Implementation of a current control scheme utilizing phase angle shifting for fast dynamic current tracking.
  • Development of a fully digital control scheme and derivation of dynamic mathematical models.
  • Verification through PSIM 9.1 simulations and hardware prototype testing using a digital signal processor.

Main Results:

  • The proposed driver successfully drives a 200 W optical power laser diode module.
  • Simulation and experimental results demonstrate highly satisfactory performance in output current command tracking control.
  • The new design offers improved efficiency and reduced size compared to traditional linear drivers.

Conclusions:

  • The novel PSD-based FB-PS DC-DC converter provides an effective solution for high-power laser diode driving.
  • The proposed digital control scheme ensures fast and accurate dynamic current tracking.
  • This advancement contributes to more efficient and compact fiber laser systems.