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Investigation of Gallium Arsenide Deformation Anisotropy during Nanopolishing via Molecular Dynamics Simulation
Bo Zhao1,2, Xifeng Gao1,2, Jiansheng Pan1,2
1Center of Ultra-Precision Optoelectronic Instrumentation Engineering, Harbin Institute of Technology, Harbin 150001, China.
Abstract:
Crystal orientation significantly influences deformation during nanopolishing due to crystal anisotropy. In this work, molecular dynamics (MD) simulations were employed to examine the process of surface generation and subsurface damage. We conducted analyses of surface morphology, mechanical response, and amorphization in various crystal orientations to elucidate the impact of crystal orientation on deformation and amorphization severity. Additionally, we investigated the concentration of residual stress and temperature. This work unveils the underlying deformation mechanism and enhances our comprehension of the anisotropic deformation in gallium arsenide during the nanogrinding process.

