Related Experiment Video
Updated: Jul 5, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
The warming-up effects of quantum-dot light emitting diodes: A reversible stability issue related to shell traps
Menglin Li1, Xin Zhang1, Hui Bao1
1MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Sciences and Engineering, Beijing Institute of Technology, Beijing 100081, China.
Abstract:
The aging phenomenon is commonly observed in quantum-dot light emitting diodes (QLEDs), involving complex chemical or physical processes. Resolving the underlying mechanism of these aging issues is crucial to deliver reliable electroluminescent devices in future display applications. Here, we report a reversible positive aging phenomenon that the device brightness and efficiency significantly improve after device operation, but recover to initial states after long-time storage or mild heat treatment, which can be termed as warming-up effects. Steady and transient equivalent circuit analysis suggest that the radiative recombination current dramatically increases but electron leakage from the quantum dots (QDs) to hole transport layer becomes more accessible during the warming-up process. Further analysis discloses that the notable enhancement of device efficiency can be ascribed to the filling of shell traps in gradient alloyed QDs. This work reveals a distinct positive aging phenomenon featured with reversibility, and further guidelines would be provided to achieve stable QLED devices in real display applications.
More Related Videos
Related Concept Videos
Deactivation Processes: Jablonski Diagram
Variables Affecting Phosphorescence and Fluorescence
Photoluminescence: Fluorescence and Phosphorescence
A pair of electrons in a...
Photoluminescence: Applications

