Resonant Raman scattering on graphene: SERS and gap-mode TERS

N N Kurus1, V Kalinin2, N A Nebogatikova1,2

  • 1Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.

RSC Advances
|January 25, 2024
PubMed
Summary

Gap-mode tip-enhanced Raman Scattering (gm-TERS) precisely maps nanoscale defects in 2D materials. This technique reveals local strain in graphene, crucial for developing advanced sensors and electronic devices.

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