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Updated: Jul 4, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Seongmin Kim1, Dongyeol Ju1, Sungjun Kim1
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
This study showcases an Indium Tin Oxide/Indium Gallium Zinc Oxide/Tantalum Nitride (ITO/IGZO/TaN) device that emulates biological synapses. The resistive random-access memory (RRAM) device offers efficient energy use and mimics synaptic functions for advanced neural computing.
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