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Instability in optical injection locking semiconductors lasers using multiparametric bifurcation analysis
A D Mengue1, E J R Olinga2, B Z Essimbi2,3
1Department of Basic Scientific Education, Higher Technical Teachers Training College, University of Ebolowa, PO Box 886, Ebolowa, Cameroon.
Chaos (Woodbury, N.Y.)
|January 26, 2024
Summary
This study explores complex dynamics in semiconductor lasers (SCLs) under optical injection, revealing new bifurcation behaviors and chaotic phenomena. Findings highlight critical parameter effects on laser stability and locking dynamics.
Area of Science:
- Nonlinear Dynamics
- Semiconductor Laser Physics
- Optical Engineering
Background:
- Semiconductor lasers (SCLs) exhibit complex dynamics under optical injection.
- Understanding bifurcations is crucial for controlling SCL behavior.
Purpose of the Study:
- Investigate bifurcations of equilibria and transients in SCLs with optical injection.
- Analyze two- and three-parameter bifurcations and their impact on laser dynamics.
- Characterize chaotic phenomena and develop methods for their quantification.
Main Methods:
- Modified rate equations for SCLs.
- Analytical and numerical multiparametric bifurcation analysis.
- 3D-plots and projections for visualizing dynamics.
- Investigation of transient regimes and Lyapunov exponents.
Main Results:
- Demonstrated Bogdanov-Takens and Gavrilov-Guckenheimer bifurcations.
- Identified a zero frequency detuning well near Hopf bifurcations.
- Revealed rich locking dynamics, including cusp bifurcations and multi-equilibrium regions.
- Characterized bursting, metastable chaos, and complex attractors.
- Showcased zero α-factor effects on unlocking regions and Hopf bifurcations.
Conclusions:
- Optical injection induces diverse and complex dynamical behaviors in SCLs.
- Bifurcation analysis provides critical insights into SCL stability and control.
- The study proposes novel methods for quantifying complex dynamics and attractors.
